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DMN3029LFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
R θ JA (t)=r(t) * R θ JA
R θ JA = 60°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.1
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±25V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.9
-
-
-
-
1.2
13,5
22
13.0
0.7
1.8
18.6
26.5
-
1.0
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
V GS = 4.5V, I D = 7.5A
V DS = 5V, I D = 10A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
580
110
70
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
-
-
-
3.0
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V, I D = 10A
V GS = 10V, V DS = 15V,
I D = 10A
V GS = 10V, V DS = 15V,
R L = 15 ? , R G = 6 ?
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
3 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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